Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode
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چکیده
of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode Katsuhiko Nishiguchi, Andres Castellanos-Gomez, Hiroshi Yamaguchi, Akira Fujiwara, Herre S. J. van der Zant, and Gary A. Steele NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft, The Netherlands
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تاریخ انتشار 2015